| 容量 | 2M |
|---|---|
| 規格 | 128Kx16 |
| 電壓 | 1.65-3.6V |
| 狀態 | Prod |
| 腳位數 | TSOP2(44), BGA(48) |
| 速度Ns | 45, 55 |
| 評論上一篇 | |
| 產品系列 | 62 = Low Power |
| Bit Org | 16 = x16 |
| Operating Voltage | WV = Wide Voltage Range |
| 包裝代碼 | B2 = BGA |
| 電壓範圍 | BLL = 2.5V to 3.6V |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = Lead-free (ROHS Compliant) |
| 字數 | 128 = 128K |
| Revision | E = E |
| 速度 | 45 = 45NS |
| 外包裝 | Tape on Reel |
The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access.