IS62WV12816EBLL-45BLI

容量 2M
規格 128Kx16
電壓 1.65-3.6V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 45, 55
評論上一篇
電壓範圍 BLL = 2.5V to 3.6V
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = Lead-free (ROHS Compliant)
Revision E = E
字數 128 = 128K
速度 45 = 45NS
Bit Org 16 = x16
產品系列 62 = Low Power
Operating Voltage WV = Wide Voltage Range
包裝代碼 B = BGA

IS62WV12816EBLL-45BLI 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 18 mA (max) at 85°C
    • CMOS Standby Current: 5.4uA (typ) at 25°C
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62WV12816EALL)
    • 2.2V-3.6V VDD (IS62/65WV12816EBLL)
  • Three state outputs

概觀

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS62WV12816EBLL-45BLI-TR 2,500 IS62WV12816EBLL-45TLI 10,000
IS62WV12816EALL-55B2I IS62WV12816EBLL-45TLI-TR 2,000
IS62WV12816EALL-55B2I-TR IS62WV12816EBLL-55B2LI
IS62WV12816EALL-55BI IS62WV12816EBLL-55B2LI-TR
IS62WV12816EALL-55BI-TR IS62WV12816EBLL-55BI
IS62WV12816EALL-55BLI IS62WV12816EBLL-55BI-TR
IS62WV12816EALL-55BLI-TR IS62WV12816EBLL-55BLI
IS62WV12816EALL-55TLI IS62WV12816EBLL-55BLI-TR
IS62WV12816EALL-55TLI-TR IS62WV12816EBLL-55TLI
IS62WV12816EBLL-45B2LI IS62WV12816EBLL-55TLI-TR
IS62WV12816EBLL-45B2LI-TR