1. 矽成
  2. 靜態隨機存取存儲器
  3. 異步 SRAM
  4. High Speed Low Power
  5. 1.65-2.2V
  6. 4M 256Kx16
  7. TSOP2(44), BGA(48)
  8. IS61WV25616EDALL

  IS61WV25616EDALL

數據表
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容量 4M
規格 256Kx16
電壓 1.65-2.2V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 20
評論上一篇 ECC Based SRAM
數據表
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IS61WV25616EDALL 特徵

  • High-speed access time: 20ns
  • Single power supply
    • 1.65V-2.2V VDD
  • Low Standby Current:1.5mA (typical)
  • Fully static operation: no clock or refresh required
  • Data control
  • Three state outputs
  • Lead-free available

概觀

The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61WV25616EDALL-20BI IS61WV25616EDALL-20BLI-TR
IS61WV25616EDALL-20BI-TR IS61WV25616EDALL-20TLI
IS61WV25616EDALL-20BLI 10,000 IS61WV25616EDALL-20TLI-TR