規格 256Kx16
電壓 1.65-2.2V
速度(ns) 20
腳位/封裝 T = TSOP
狀態 Prod
評注 ECC Based SRAM
產品系列 61 = 高速
硅片版本 ED
電壓範圍 ALL = 1.65V to 2.2V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)

IS61WV25616EDALL-20TLI 特徵

  • High-speed access time: 20ns
  • Single power supply
    • 1.65V-2.2V VDD
  • Low Standby Current:1.5mA (typical)
  • Fully static operation: no clock or refresh required
  • Data control
  • Three state outputs
  • Lead-free available

概觀

The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.