IS45S32160F-6BLA1-TR

Density 512M
Org 16Mx32
Vcc 3.3V
Type SDR
Refresh 8K
Speed 6 = 166MHz
Status Prod
Comment
Pkg Pins TSOP(86), BGA(90)
Temp. Grade A1 = Automotive Grade (-40°C to +85°C)
Solder Type L = SnAgCu
Generation F = F
Number Of Words 160 = 16M
Operating Voltage Range S = 3.3V SDR
Bus Width 32 = x32
Package Type B = BGA
Product Family 45 = SDR Automotive grade
Outpack Tape on Reel

IS45S32160F-6BLA1-TR Features

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.5
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Packages: 90-ball TF-BGA, 86-pin TSOP-ll

Overview

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS45S32160F-6BLA1 IS45S32160F-7BLA2-TR
IS45S32160F-6TLA1 IS45S32160F-7TLA1
IS45S32160F-6TLA1-TR IS45S32160F-7TLA1-TR
IS45S32160F-7BLA1 IS45S32160F-7TLA2 648
IS45S32160F-7BLA1-TR IS45S32160F-7TLA2-TR
IS45S32160F-7BLA2 2