IS45S32160F-6BLA1

Density	512M
Org	16Mx32
Vcc	3.3V
Type	SDR
Refresh	8K
Speed	6 = 166MHz
Status	Prod
Comment
Pkg Pins	TSOP(86), BGA(90)
Product Family	45 = SDR Automotive grade
Temp. Grade	A1 = Automotive Grade (-40°C to +85°C)
Solder Type	L = SnAgCu
Number Of Words	160 = 16M
Generation	F = F
Operating Voltage Range	S = 3.3V SDR
Bus Width	32 = x32
Package Type	B = BGA

Datasheet

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IS45S32160F-6BLA1 Features

Clock frequency: 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.5
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 64 ms
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Packages: 90-ball TF-BGA, 86-pin TSOP-ll

Overview

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

Related Part Number(s)

Description	Available Qty	Description	Available Qty
IS45S32160F-6BLA1-TR		IS45S32160F-7BLA2-TR
IS45S32160F-6TLA1		IS45S32160F-7TLA1
IS45S32160F-6TLA1-TR		IS45S32160F-7TLA1-TR
IS45S32160F-7BLA1		IS45S32160F-7TLA2	648
IS45S32160F-7BLA1-TR		IS45S32160F-7TLA2-TR
IS45S32160F-7BLA2	2