IS45S16100E-7BLA1

Density	16M
Org	1Mx16
Vcc	3.3V
Type	SDR
Refresh	2K
Speed	7 = 143MHz
Status	Contact ISSI
Comment
Pkg Pins	TSOP2(50), BGA(60)
Product Family	45 = SDR Automotive grade
Temp. Grade	A1 = Automotive Grade (-40°C to +85°C)
Solder Type	L = SnAgCu
Number Of Words	100 = 1M
Generation	E = E
Operating Voltage Range	S = 3.3V SDR
Bus Width	16 = x16
Package Type	B = BGA

Datasheet

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IS45S16100E-7BLA1 Features

Clock frequency: 200, 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Two banks can be operated simultaneously and independently
Dual internal bank controlled by A11 (bank select)
Single 3.3V power supply
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Byte controlled by LDQM and UDQM
Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA

Overview

ISSI’s 16Mb Synchronous DRAM IS42/4516100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

Related Part Number(s)

Description	Stock Qty	Available Qty	Description	Available Qty
IS45S16100E-7BLA1-TR		6,836	IS45S16100E-7BLA2-TR
IS45S16100E		56	IS45S16100E-7TLA1	151
IS45S16100E-6TLA1		117	IS45S16100E-7TLA1-TR	1,558
IS45S16100E-6TLA1-TR		1,000	IS45S16100E-7TLA2	117
IS45S16100E-7BLA2	1,888	989	IS45S16100E-7TLA2-TR	1,000