| 容量 | 9M |
|---|---|
| 規格 | 512Kx18 |
| 電壓 | 2.5V |
| VccQ | 2.5V |
| 狀態 | Prod |
| tKQ(ns) | 2.6, 3.1, 3.8 |
| 腳位數 | BGA(119), QFP(100), BGA(165) |
| 速度Mhz | 250, 200, 166 |
| 評論上一版本 | P/SCD, IS61VPS51218A |
The 9Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and net- working applications. The IS61LPS/VPS25636B and IS64LPS25636B are organized as 262,144 words by 36 bits. The IS61LPS25632B is organized as 262,144 words by 32 bits. The IS61LPS/VPS51218B is organized as 524,288 words by 18 bits. Fabricated with ISSI's ad- vanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.