1. 矽成
2. 靜態隨機存取存儲器
3. 同步 SRAM
4. 無等待（ZBT）
5. 2.5V
6. BGA
7. IS61NVP409618B-250B3L-TR

IS61NVP409618B-250B3L-TR 特徵

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control us- ing MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply: NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%) NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%) NVVP: Vdd 1.8V (± 5%), Vddq 1.8V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available

概觀

, 100 percent bus utilization , No wait cycles between Read and Write , Internal self-timed write cycle , Individual Byte Write Control , Single R/W (Read/Write) control pin , Clock controlled, registered address,