1. 矽成
  2. 靜態隨機存取存儲器
  3. 同步 SRAM
  4. Pipeline
  5. 3.3V
  6. 2M 64Kx36
  7. QFP(100)
  8. IS61LP6436A

  IS61LP6436A

數據表
索取報價
容量 2M
規格 64Kx36
電壓 3.3V
VccQ 2.5/3.3V
狀態 Prod
tKQ(ns) 3.5, 4
腳位數 QFP(100)
速度Mhz 166, 133
評論上一版本 P
數據表
索取報價

IS61LP6436A 特徵

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Pentium™ or linear burst sequence control us- ing MODE input
  • Three chip enables for simple depth expansion and address pipelining
  • Common data inputs and data outputs
  • JEDEC 100-Pin TQFP package
  • Power-down snooze mode
  • Power Supply: +3.3V Vdd +3.3V or 2.5V Vddq (I/O)

概觀

The ISSI IS61LP6432A/36A is a high-speed synchronous static RAM designed to provide a burstable, high-perfor- mance memory for high speed networking and communica- tion applications. The IS61LP6432A is organized as 64K words by 32 bits and the IS61LP6436A is organized as 64K words by 36 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61LP6436A-133TQLI 10,000 IS61LP6436A-166TQLI
IS61LP6436A-133TQLI-TR 800 IS61LP6436A-166TQLI-TR