容量 2M
規格 64Kx32
VccQ 2.5/3.3V
電壓 3.3V
tKQ 4
速度(MHz) 133
腳位/封裝 QFP(100)
狀態 Prod
評注 P
產品系列 61 = 高速
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)

IS61LP6432A-133TQLI 特徵

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Pentium™ or linear burst sequence control us- ing MODE input
  • Three chip enables for simple depth expansion and address pipelining
  • Common data inputs and data outputs
  • JEDEC 100-Pin TQFP package
  • Power-down snooze mode
  • Power Supply: +3.3V Vdd +3.3V or 2.5V Vddq (I/O)


The ISSI IS61LP6432A/36A is a high-speed synchronous static RAM designed to provide a burstable, high-perfor- mance memory for high speed networking and communica- tion applications. The IS61LP6432A is organized as 64K words by 32 bits and the IS61LP6436A is organized as 64K words by 36 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.