1. 矽成
  2. 靜態隨機存取存儲器
  3. 同步 SRAM
  4. Flow-Through
  5. 3.3V
  6. 2M 64Kx36
  7. QFP(100)
  8. IS61LF6436A-8

  IS61LF6436A-8

數據表
索取報價
容量 2M
規格 64Kx36
電壓 3.3V
VccQ 2.5/3.3V
狀態 Prod
tKQ(ns) 8.5
腳位數 QFP(100)
速度Mhz 90
評論上一版本 F
數據表
索取報價

IS61LF6436A-8 特徵

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Interleaved or linear burst sequence control us- ing MODE input
  • Three chip enables for simple depth expansion and address pipelining
  • Common data inputs and data outputs
  • Power-down control by ZZ input
  • JEDEC 100-Pin TQFP package
  • Power Supply: +3.3V Vdd +3.3V or 2.5V Vddq
  • Control pins mode upon power-up:
    • MODE in interleave burst mode
    • ZZ in normal operation mode
  • Industrial Temperature Available:

概觀

The ISSI IS61LF6432A and IS61LF6436A are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS61LF6432A is organized as 65,536 words by 32 bits. IS61LF6436A is organized as 65,536 words by 36 bits. They are fabricated with ISSI's advanced CMOS technology. The device inte- grates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61LF6436A-8-TR IS61LF6436A