1. 矽成
2. 靜態隨機存取存儲器
3. 同步 SRAM
4. Flow-Through
5. 3.3V
6. 2M 64Kx32
7. QFP(100)
8. IS61LF6432A-8-TR

IS61LF6432A-8-TR 特徵

• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control us- ing MODE input
• Three chip enables for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin TQFP package
• Power Supply: +3.3V Vdd +3.3V or 2.5V Vddq
• Control pins mode upon power-up:
• • MODE in interleave burst mode
  • ZZ in normal operation mode
• Industrial Temperature Available:

概觀

The ISSI IS61LF6432A and IS61LF6436A are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS61LF6432A is organized as 65,536 words by 32 bits. IS61LF6436A is organized as 65,536 words by 36 bits. They are fabricated with ISSI's advanced CMOS technology. The device inte- grates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.