概觀
The 18Mb product family features high-speed, low-
power synchronous static RAMs designed to provide
burstable, high-performance memory for
communication and networking applications. The
IS61(64)LF/VF/VVF51236(32)B organized as 524,288
words by 36(32)bits. The IS61(64)LF/VF/VVF102418B
are organized as 1,048,576 words by 18 bits.
Fabricated with ISSI's advanced CMOS technology,
the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a
single monolithic circuit. All synchronous inputs pass
through registers controlled by a positive-edge-
triggered single clock input.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock input. Write cycles can
be one to four bytes wide as controlled by the write
control inputs.
Separate byte enables allow individual bytes to be
written. The byte write operation is performed by using
the byte write enable (/BWE) input combined with one
or more individual byte write signals (/BWx). In
addition, Global Write (/GW) is available for writing all
bytes at one time, regardless of the byte write controls.
Bursts can be initiated with either /ADSP (Address
Status Processor) or /ADSC (Address Status Cache
Controller) input pins. Subsequent burst addresses can
be generated internally and controlled by the /ADV
(burst address advance) input pin.
The mode pin is used to select the burst sequence
order. Linear burst is achieved when this pin is tied
LOW. Interleave burst is achieved when this pin is tied
HIGH or left floating.