| 容量 | 4M |
|---|---|
| 規格 | 256Kx16 |
| 電壓 | 1.65-3.3V |
| 狀態 | Prod |
| 腳位數 | TSOP2(44), BGA(48) |
| 速度Ns | 55, 70 |
| 評論上一篇 | |
| 產品系列 | 65 = Automotive Low Power |
| Bit Org | 16 = x16 |
| Operating Voltage | WV = Wide Voltage Range |
| 包裝代碼 | B = BGA |
| 電壓範圍 | BLL = 2.5V to 3.6V |
| 温度等级 | A1 = Automotive Grade (-40°C to +85°C) |
| 焊料類型 | blank = SnPb |
| 字數 | 256 = 256K |
| 速度 | 55 = 55NS |
| 外包裝 | Tape on Reel |
The ISSI IS65WV25616ALL/IS65WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS1 is LOW, and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS65WV25616BALL/65WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).