1. 矽成
  2. 靜態隨機存取存儲器
  3. Serial SRAM & Low Pin Count SRAM
  4. Automotive Asynchronous SRAM
  5. 2.4-3.6V
  6. BGA
  7. IS61WV20488BLL-10MI

  IS61WV20488BLL-10MI

數據表
索取報價
規格 2Mx8
腳位/封裝 BGA
電壓 2.4-3.6V
焊接 SnPb
狀態 Prod
速度（ns） 10
温規 Industrial Grade (-40C to +85°C)
電壓範圍 2.2V (2.4V/2.5V) to 3.6V
產品系列 61 = High Speed
Bit Org 8 = x8
Operating Voltage WV = Wide Voltage Range
包裝代碼 M = BGA
電壓範圍 BLL = 2.5V to 3.6V
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = SnPb
字數 2048 = 2048K
速度 10 = 10NS
數據表
索取報價

IS61WV20488BLL-10MI 特徵

  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE op- tions
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single power supply
    • Vdd 1.65V to 2.2V (IS61WV20488ALL) speed = 20ns for Vcc = 1.65V to 2.2V
    • Vdd 2.4V to 3.6V (IS61/64WV20488BLL)
  • Packages available: speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.3V + 5%
  • Industrial and Automotive Temperature Support

概觀

The ISSI IS61WV20488ALL/BLL and IS64WV20488BLL are very high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS61WV20488ALL/BLL and IS64WV20488BLL are fab- ricated using ISSI's high-performance CMOS technol- ogy. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.