Buy | |
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容量 | 8M |
電壓 | 2.7-3.6V |
狀態 | S=NOW |
I / O寬度 | x4 |
腳位數 | SOIC(16), BGA(24) |
溫度範圍 | -40 to 125°C |
速度Mhz Ns | 133 MHz |
評論上一篇 | Serial QUADRAM |
速度 | 133 = 133 MHz |
Item | 66 = Pseudo SRAM/HyperRAM™ |
電壓 - 電源 | BLL = 3V |
密度配置 | 2M4 = 8Mb /2M x4 |
包裝代碼 | M = 16-pin SOIC 300mil |
ROHS版 | L = true |
Revision | D = D |
產品類別 | WVQ = QuadRAM |
溫度範圍 | I = Industrial (-40°C to 85°C) |
The IS66/67WVQ2M4DALL/BLL are integrated memory device containing 16Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 1M words by 8 bits. The device supports Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash. The device supports Very Low Signal Count (7 signal pins; SCLK, CS#, DQSM, and 4 SIOs), Hidden Refresh Operation, and Automotive temperature (A3, -40°C to +125°C) operation. Due to DDR operation, minimum transferred data size is a byte (8 bits) through 4 SIO pins. PERFORMANCE SUMMARY.