IS45S81600E-7CTLA2-TR

容量 128M
規格 16Mx8
電壓 3.3V
類型 SDR
刷新 4K
速度 7 = 143MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54)
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = 100% matte Sn
Generation E = E
字數 1600 = 16M
CL(CAS延遲) C = 4
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP
產品系列 45 = SDR Automotive grade
外包裝 Tape on Reel

IS45S81600E-7CTLA2-TR 特徵

  • Clock frequency: 166, 143 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS45S81600E IS45S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S81600E-7CTLA2 IS45S81600E-7CTNA1-TR 1,500
IS45S81600E IS45S81600E-7CTNA2 3,071
IS45S81600E-6TLA1 IS45S81600E-7CTNA2-TR
IS45S81600E-6TLA1-TR IS45S81600E-7TLA1 108
IS45S81600E-7CTLA1 IS45S81600E-7TLA1-TR 1,500
IS45S81600E-7CTLA1-TR IS45S81600E-7TLA2 100,000
IS45S81600E-7CTNA1 1,924 IS45S81600E-7TLA2-TR