IS45S16400J-5TLA1

容量 64M
規格 4Mx16
電壓 3.3V
類型 SDR
刷新 4K
速度 5 = 200MHz
狀態 Prod
評注
腳位數 TSOP2(54), BGA(54)
產品系列 45 = SDR Automotive grade
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
字數 400 = 4M
Generation J = J
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 T = TSOP

IS45S16400J-5TLA1 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • Auto refresh (CBR)
  • 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP II 54-ball TF-BGA (8mm x 8mm) 60-ball TF-BGA (10.1mm x 6.4mm)

概觀

ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16400J-5TLA1-TR IS45S16400J-6TLA1 6,236
IS45S16400J IS45S16400J-6TLA1-TR 6,500
IS45S16400J-5BLA1 IS45S16400J-7BLA1 6,170
IS45S16400J-5BLA1-TR IS45S16400J-7BLA1-TR 7,500
IS45S16400J-5CTLA1 IS45S16400J-7BLA2 248
IS45S16400J-5CTLA1-TR IS45S16400J-7BLA2-TR 5,000
IS45S16400J-6BLA1 6,728 IS45S16400J-7CTLA1 10
IS45S16400J-6BLA1-TR 7,500 IS45S16400J-7CTLA1-TR
IS45S16400J-6BLA2 6,912 IS45S16400J-7CTLA2 6,605
IS45S16400J-6BLA2-TR 7,500 IS45S16400J-7CTLA2-TR 6,998
IS45S16400J-6CTLA1 324 IS45S16400J-7TLA1 5,000
IS45S16400J-6CTLA1-TR 6,500 IS45S16400J-7TLA1-TR 1,500
IS45S16400J-6CTLA2 3,650 IS45S16400J-7TLA2 6,288
IS45S16400J-6CTLA2-TR IS45S16400J-7TLA2-TR 6,500