IS45S16320B-7BLA1

容量	512M
規格	32Mx16
電壓	3.3V
類型	SDR
刷新	8K
速度	7 = 143MHz
狀態	Contact ISSI
評注
腳位數	TSOP2(54), BGA(54)
產品系列	45 = SDR Automotive grade
温度等级	A1 = Automotive Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	320 = 32M
Generation	B = B
工作電壓範圍	S = 3.3V SDR
總線寬度	16 = x16
腳位/封裝	B = BGA

數據表

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IS45S16320B-7BLA1 特徵

Clock frequency: 166, 143, 133 MHz
-6 6 10 166 100 5.4 6 -7 7 10 143 100 5.4 6 -75E Unit
- 7.5
- 133
- 5.5 ns ns Mhz Mhz ns ns
Internal bank for hiding row access/precharge
Power supply IS42/45S16320B IS42S86400B
LVTTL interface
Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

相關IC编號

IC 編號	可用數量	IC 編號	可用數量
IS45S16320B-7BLA1-TR	6,833	IS45S16320B-7CTNA1	108
IS45S16320B-6BLA1		IS45S16320B-7CTNA1-TR	500
IS45S16320B-6BLA1-TR		IS45S16320B-7CTNA2
IS45S16320B-7BLA2		IS45S16320B-7CTNA2-TR
IS45S16320B-7BLA2-TR		IS45S16320B-7TLA1	6,019
IS45S16320B-7CTLA1		IS45S16320B-7TLA1-TR	6,660
IS45S16320B-7CTLA1-TR		IS45S16320B-7TLA2	2,000
IS45S16320B-7CTLA2		IS45S16320B-7TLA2-TR
IS45S16320B-7CTLA2-TR