IS42S83200G-7BLI

容量 256M
規格 32Mx8
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 NR
評注
腳位數 TSOP2(54), BGA(54)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
字數 3200 = 32M
Generation G = G
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 B = BGA

IS42S83200G-7BLI 特徵

  • Clock frequency: 200,166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S83200G-7BLI-TR 7,500 IS42S83200G-6TLI 50,000
IS42S83200G IS42S83200G-6TLI-TR 6,519
IS42S83200G-5BL IS42S83200G-7BL 7,933 5,000
IS42S83200G-5BL-TR IS42S83200G-7BL-TR 7,500
IS42S83200G-5TL IS42S83200G-7TL 5,000
IS42S83200G-5TL-TR IS42S83200G-7TL-TR 6,500
IS42S83200G-6TL 5,000 IS42S83200G-7TLI 50,000
IS42S83200G-6TL-TR 6,500 IS42S83200G-7TLI-TR 6,500