IS42S81600F-5TLI

容量	128M
規格	16Mx8
電壓	3.3V
類型	SDR
刷新	4K
速度	5 = 200MHz
狀態	Prod
評注
腳位數	TSOP2(54)
產品系列	42 = SDR Commercial/Industrial grade
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = 100% matte Sn
字數	1600 = 16M
Generation	F = F
工作電壓範圍	S = 3.3V SDR
總線寬度	8 = x8
腳位/封裝	T = TSOP

數據表

索取報價

IS42S81600F-5TLI 特徵

Clock frequency: 200, 166, 143 MHz
Internal bank for hiding row access/precharge
Power supply IS42/45S81600F IS42/45S16800F Vdd Vddq 3.3V 3.3V 3.3V 3.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

IC 編號	可用數量	IC 編號	可用數量
IS42S81600F-5TLI-TR		IS42S81600F-6TLI-TR	5,000
IS42S81600F-5TL		IS42S81600F-7TL	216
IS42S81600F-5TL-TR		IS42S81600F-7TL-TR	1,500
IS42S81600F-6TL	5,000	IS42S81600F-7TLI	50,000
IS42S81600F-6TL-TR	1,500	IS42S81600F-7TLI-TR	6,500
IS42S81600F-6TLI	2,500

IC 編號

庫存數量

可用數量

IC 編號

庫存數量

可用數量

5,000

216