IS42S32800G-7BI

容量 256M
規格 8Mx32
電壓 3.3V
類型 SDR
刷新 4K
速度 7 = 143MHz
狀態 NR
評注
腳位數 BGA(90)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = Sn/Pb
字數 800 = 8M
Generation G = G
工作電壓範圍 S = 3.3V SDR
總線寬度 32 = x32
腳位/封裝 B = BGA

IS42S32800G-7BI 特徵

  • Clock frequency: 200, 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 90-ball TF-BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32 bit x 4 Banks.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S32800G-7BI-TR IS42S32800G-6BLI 2,900
IS42S32800G IS42S32800G-6BLI-TR 7,500
IS42S32800G-6B IS42S32800G-7B
IS42S32800G-6B-TR IS42S32800G-7B-TR
IS42S32800G-6BI 6,239 IS42S32800G-7BL 5,000
IS42S32800G-6BI-TR 7,500 IS42S32800G-7BL-TR 7,500
IS42S32800G-6BL 5,000 IS42S32800G-7BLI 50,000
IS42S32800G-6BL-TR 7,500 IS42S32800G-7BLI-TR 5,000