IS49NLS18160

容量

288M

規格

16Mx18

狀態

Prod

評注

接口

Separate I/O

腳位數

BGA(144)

產品系列

49NL = RLDRAM 2

配置

18160 = 16M x 18

I / O類型

S = Separate I/O

IS49NLS18160 特徵

400MHz DDR operation (800Mb/s/pin data rate) 14.4 Gb/s peak bandwidth (x18 Separate I/O at 400 MHz clock frequency)
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and output data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
On-die termination (ODT) RTT
Operating temperature: 25-60Ω matched impedance outputs 2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O IEEE 1149.1 compliant JTAG boundary scan Commercial (TC = 0° to +95°C; TA = 0°C to +70°C), Industrial (TC = -40°C to +95°C; TA = -40°C to +85°C)
Reduced cycle time (15ns at 400MHz)
32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total each 32ms) 8 internal banks
Non-multiplexed addresses (address multiplexing
option available) SRAM-type interface Programmable READ latency (RL), row cycle time, and burst sequence length
Balanced READ and WRITE latencies in order to optimize data bus utilization
Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK. OPTIONS Package: