| 容量 | 18M |
|---|---|
| 規格 | 1Mx18 |
| 陣 | 2 |
| 狀態 | Prod |
| 速度Mhz | 300, 333, 400, 450 |
| 評論上一版本 | 2.0 Cycle Read Latency |
| 產品系列 | 61 = QUAD/P DDR-2/P |
| 配置 | 1M18 = 1M x18 |
| 包裝代碼 | M3 = 165-ball BGA (15 x 17 mm) |
| ROHS版 | = Leaded |
| 突發類型 | B2 = Burst 2 |
| 硅片版本 | C = C |
| 讀延時（RL） | 2 = 2.0 clock cycles |
| ODT選項 | 2 = ODT Option 2 If ODT = HIGH, a high range termination resistance is selected. If ODT = LOW or floating, ODT is disabled |
| 產品類別 | QDP = QUADP |
| 溫度範圍 | I = Industrial (-40°C to +85°C) |
| 速度 | 333 = 333MHz |
The are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the.