IS61QDP2B21M18A-300M3

IS61QDP2B21M18A-300M3 特徵

概觀

The 36MB IS61QDP2B251236A/A1/A2 and IS61QDP2B21M18A/A1/A2 are synchronous, high- performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a description of the basic operation of these QUADP (Burst of 2) SRAMs. Read and write addresses are registered on alternating rising edges of the K clock. Read and write performed in double data rate. Byte writes can change with the corresponding data-in to enable or disable writes on a per-byte basis. An internal write buffer enables the data-ins to be registered half a cycle earlier than the write address. The first data-in burst is clocked at the same time as the write command signal, and the second burst is timed to the following rising edge of the K# clock. During the burst read operation, the data-outs from the first bursts are updated from output registers of the second rising edge of the K# clock (starting two cycles later after read command). The data-outs from the second bursts are updated with the third rising edge of the K clock. The K and K# clocks are used to time the data-outs. The device is operated with a single +1.8V power supply and is compatible with HSTL I/O interface.