規格 | 16Mx32 |
---|---|
腳位/封裝 | BGA(90) |
電壓 | 1.8V |
刷新 | 8K |
字數 | 16M |
型號別 | IBIS, IBIS(46) |
焊接 | SnAgCu |
狀態 | Prod |
外包裝 | Tape on Reel |
類型 | MDDR |
總線寬度 | 32 = x32 |
速度(MHz) | up to 166Mhz |
温規 | Automotive Grade (-40C to +105°C) |
代/版本 | B |
產品系列 | 46 = DDR/DDR2/DDR3/DDR4 Automotive grade |
速度 | 6 = 166MHz |
工作電壓範圍 | LR = 1.8V mobile DDR (LPDDR) |
Generation | B = B |
腳位/封裝 | B = BGA |
温度等级 | A2 = Automotive Grade (-40°C to +105°C) |
焊料類型 | L = SnAgCu |
字數 | 160 = 16M |
The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.