IS43LR16200D-6BLI

容量	32M
規格	2Mx16
電壓	1.8V
類型	MDDR
刷新	4K
狀態	Prod
腳位數	BGA(60)
速度Mhz	200, 166, 133
評論上一篇	IS43/46LR16200C
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	200 = 2M
Generation	D = D
速度	6 = 166MHz
工作電壓範圍	LR = 1.8V mobile DDR (LPDDR)
總線寬度	16 = x16
腳位/封裝	B = BGA

IS43LR16200D-6BLI 特徵

JEDEC standard 1.8V power supply
64ms refresh period (4K cycle)
Two internal banks for concurrent operation
Auto & self refresh
MRS cycle with address key programs
Concurrent Auto Precharge
- CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16)
Maximum clock frequency up to 166MHz
Maximum data rate up to 333Mbps/pin
- Burst type (sequential & interleave)
Power Saving support
Fully differential clock inputs (CK, /CK)
- PASR (Partial Array Self Refresh)
All inputs except data & DM are sampled at the rising
- Auto TCSR (Temperature Compensated Self Refresh) edge of the system clock - Deep Power Down Mode
Data I/O transaction on both edges of data strobe
- Programmable Driver Strength Control by Full Strength
Bidirectional data strobe per byte of data (DQS) or 3/4, 1/2, 1/4, 1/8 of Full Strength
DM for write masking only
LVCMOS compatible inputs/outputs
Edge aligned data & data strobe output