1. 矽成
  2. Mobile DRAM
  3. Mobile DDR1 SDRAM
  4. Preceding
  5. 1.8V
  6. 32M 2Mx16
  7. BGA(60)
  8. IS43LR16200C-6BL

  IS43LR16200C-6BL

數據表
索取報價
容量 32M
規格 2Mx16
腳位/封裝 BGA(60)
電壓 1.8V
刷新 4K
字數 2M
型號別 IBIS
焊接 SnAgCu
狀態 EOL
類型 MDDR
總線寬度 16 = x16
速度（MHz） up to 166Mhz
温規 Commercial Grade (0C to +70°C)
代/版本 C
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
字數 200 = 2M
Generation C = C
速度 6 = 166MHz
工作電壓範圍 LR = 1.8V mobile DDR (LPDDR)
腳位/封裝 B = BGA
數據表
索取報價

IS43LR16200C-6BL 特徵

  • JEDEC standard 1.8V power supply
  • 64ms refresh period (4K cycle)
  • Two internal banks for concurrent operation
  • Auto & self refresh
  • MRS cycle with address key programs
  • Concurrent Auto Precharge
  • - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16)
  • Maximum clock frequency up to 166MHz
  • Maximum data rate up to 333Mbps/pin
  • - Burst type (sequential & interleave)
  • Power Saving support
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
  • Bidirectional data strobe per byte of data (DQS) - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - Deep Power Down Mode - Programmable Driver Strength Control by Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • DM for write masking only
  • LVCMOS compatible inputs/outputs
  • Edge aligned data & data strobe output