IS43LD16640A-3BLI-TR - 日耀电子 | ISSI/蕊成授权代理

容量	1G
規格	64Mx16
腳位/封裝	BGA
電壓	1.2/1.8V
刷新	4K
字數	64M
型號別	IBIS-43, IBIS-46
焊接	SnAgCu
狀態	NR
外包裝	Tape on Reel
類型	LPDDR2
總線寬度	16 = x16
速度（MHz）	up to 333 Mhz
温規	Industrial Grade (-40C to +85°C)
代/版本	A
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	640 = 64M
Generation	A = A
速度	3 = 333MHz
工作電壓範圍	LD = 1.2V - 1.8V LPDDR2
腳位/封裝	B = BGA

數據表

索取報價

IS43LD16640A-3BLI-TR 特徵

Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V
High Speed Un-terminated Logic(HSUL_12) I/O Interface
Clock Frequency Range : 10MHz to 400MHz (data rate range : 20Mbps to 800 Mbps per I/O)
Four-bit Pre-fetch DDR Architecture
Multiplexed, double data rate, command/ad- dress inputs
Eight internal banks for concurrent operation
Bidirectional/differential data strobe per byte of data (DQS/DQS#)
Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16)
Per-bank refresh for concurrent operation
ZQ Calibration
On-chip temperature sensor to control self re- fresh rate
Partial
- array self refresh(PASR)
- Bank & Seg- descRiption The IS43/46LD16640A/32320A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAMs organized as 8 banks (S4). The deviceis organized as 8 banks of 8Meg words of 16bits or 4Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 4n bits prefetched to achieve very high bandwidth. AddRess tABLe Parameter Row Addresses Column Addresses Bank Addresses Refresh Count 32Mx32 R0-R12 C0-C8 BA0-BA2 4K 64Mx16 R0-R12 C0-C9 BA0-BA2 4K ment masking
Deep power-down mode(DPD)
Operation Temperature Commercial (TC = 0°C to 85°C) Industrial (TC = -40°C to 85°C) Automotive, A1 (TC = -40°C to 85°C) Automotive, A2 (TC = -40°C to 105°C) options

概觀

Clock: CK_t and CK_c are differential clock inputs. All Double Data Rate (DDR) CA inputs are sampled on both positive and negative edge of CK_t. Single Data Rate (SDR) inputs, CS_n and CKE, are sampled at the positive Clock edge. Clock is defined as the differential pair, CK_t and CK_c. The positive Clock edge is defined by the crosspoint of a rising CK_t and a falling CK_c. The negative Clock edge is defined by the crosspoint of a falling CK_t and a rising CK_c. Clock Enable: CKE HIGH activates and CKE LOW deactivates internal clock signals and therefore device input buffers and output drivers. Power savings modes are entered and exited through CKE transitions. CKE is considered part of the command code. See Command Truth Table for command code descriptions. CKE is sampled at the positive Clock edge. Chip Select: CS_n is considered part of the command code. See Command Truth Table for command code descriptions. CS_n is sampled at the positive Clock edge. DDR Command/Address Inputs: Uni-directional command/address bus inputs. CA is considered part of the command code. See Command Truth Table for command code descriptions. Data Inputs/Output: Bi-directional data bus.