容量 64M
規格 4Mx16
類型 SDR
電壓 1.8V
刷新 4K
速度(MHz) 133
腳位/封裝 BGA(54)
狀態 Contact ISSI
產品系列 45 = 車規SDRAM
總線寬度 16 = x16
字數 400 = 4M
代/版本 L
焊接 L = SnAgCu
温規 A2 = 車規 (-40C to +105°C)
外包裝 卷轴包

IS45VS16400L-75BLA2-TR 特徵

  • Clock frequency: 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 1.8V power supply
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • Auto refresh (CBR)
  • 4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-ball TF-BGA (8mm x 8mm)

概觀

ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.