1. 矽成
2. Mobile DRAM
3. 低電壓/移動SDR SDRAM
4. Mobile SDR SDRAM
5. 1.8/2.5/3.5V
6. BGA(54)
7. IS45VM16320E-6BLA1

IS45VM16320E-6BLA1 特徵

• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade)
• Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
• Programmable CAS Latency : 2,3 clocks
• All inputs and outputs referenced to the positive edge of the system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
• Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45SM/RM/VM16320E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 8,388,608 words x 16.