1. 矽成
2. Mobile DRAM
3. 低電壓/移動SDR SDRAM
4. Mobile SDR SDRAM
5. 1.8V
6. 512M 32Mx16
7. BGA(54)
8. IS45VM16320D-75BLA1-TR

IS45VM16320D-75BLA1-TR 特徵

• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 8K refresh cycles every 16ms (A2 grade) or 64ms (Commercial, Industrial, A1 grade)
• Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
• Programmable CAS Latency : 2,3 clocks
• All inputs and outputs referenced to the positive edge of the system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control - Full Strength or 1/2, 1/4 or 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45VM16320D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.