IS45SM16160K-75BLA1-TR

容量 256M
規格 16Mx16
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 8K
狀態 Prod
評注
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation K = K
字數 160 = 16M
速度 75 = 133Mhz
工作電壓範圍 SM = 3.3V
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade
外包裝 Tape on Reel

IS45SM16160K-75BLA1-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.

 

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IS45RM16160K-6BLA1 IS45VM16160K-75BLA1
IS45RM16160K-6BLA1-TR IS45VM16160K-75BLA1-TR
IS45RM16160K-6BLA2 IS45VM16160K-75BLA2
IS45RM16160K-6BLA2-TR IS45VM16160K-75BLA2-TR
IS45RM16160K-75BLA1