容量 256M
規格 16Mx16
電壓 1.8/2.5/3.3V
刷新 8K
速度(MHz) 75 = up to 133Mhz @ CL2
腳位/封裝 BGA(54)
狀態 Prod
產品系列 45 = 車規SDRAM
總線寬度 16 = x16
字數 160 = 16M
代/版本 K
焊接 L = SnAgCu
温規 A1 = 車規 (-40C to +85°C)
外包裝 卷轴包

IS45SM16160K-75BLA1-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode


These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.