規格 16Mx16
類型 SDR
電壓 1.8V
刷新 8K
速度(MHz) 75 = up to 133Mhz @ CL2
腳位/封裝 T = TSOP
狀態 Prod
產品系列 42 = 商業/工業級SDRAM
總線寬度 16 = x16
字數 160 = 16M
代/版本 J
焊接 L = 100% matte Sn
温規 I = 工業級 (-40C to +85°C)
相關IC编號
IS42VS16160J-75TLI-TR

IS42VS16160J-75TLI 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
    • Sequential and Interleave
  • Auto Refresh (CBR) OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VSxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54) x32
    • TSOP II (86)

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Synchronous DRAM is designed to minimize power consumption making it ideal for low- power applications.