| 規格 | 4Mx32 |
|---|---|
| 類型 | MSDR |
| 電壓 | 1.8/2.5/3.3V |
| 刷新 | 4K |
| 速度（MHz） | 6 = up to 166Mhz |
| 腳位/封裝 | BGA(90) |
| 狀態 | EOL |
| 型號別 | IBIS-RM/SM, IBIS-VM |
| 產品系列 | 42 = 商業/工業級SDRAM |
| 總線寬度 | 32 = x32 |
| 字數 | 400 = 4M |
| 代/版本 | G |
| 焊接 | L = SnAgCu |
| 温規 | I = 工業級 (-40C to +85°C) |
| 外包裝 | 卷轴包 |
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IS42VM32400G-6BLI-TR 特徵
- Auto refresh and self refresh
- All pins are compatible with LVCMOS interface
- 4K refresh cycle / 64ms
- Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full Page for Sequential Burst
- 4 or 8 for Interleave Burst
- Programmable CAS Latency : 2,3 clocks
- All inputs and outputs referenced to the positive edge of the system clock
- Data mask function by DQM
- Internal 4 banks operation
- Burst Read Single Write operation
- Special Function Support
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
- Programmable Driver Strength Control
- Full Strength or 1/2, 1/4, 1/8 of Full Strength
- Deep Power Down Mode
概觀
These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.