規格 2Mx16
類型 MSDR
電壓 1.8/2.5/3.3V
刷新 4K
速度(MHz) 75 = up to 133Mhz @ CL2
腳位/封裝 BGA(90)
狀態 EOL
型號別 IBIS-RM/SM, IBIS-VM
產品系列 42 = 商業/工業級SDRAM
總線寬度 32 = x32
字數 100 = 1M
代/版本 C
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)

IS42SM32100C-75BLI 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type.
  • - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control
  • - Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • Deep Power Down Mode.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal dual banks operation.
  • Burst Read Single Write operation.
  • Special Function Support.
  • - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh)

概觀

These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.