規格 8Mx16
電壓 1.8/2.5/3.3V
刷新 4K
速度(MHz) 75 = up to 133Mhz @ CL2
腳位/封裝 BGA(54)
狀態 EOL
產品系列 42 = 商業/工業級SDRAM
總線寬度 16 = x16
字數 800 = 8M
代/版本 G
焊接 [空白] = SnPb
温規 I = 工業級 (-40C to +85°C)

IS42SM16800G-75BI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support
  • PASR(Partial Array Self Refresh)
  • Auto TCSR(Temperature Compensated Self Refresh)
  • Programmable Driver Strength Control
  • Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • Deep Power Down Mode


These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.