容量 32M
規格 2Mx16
電壓 1.8/2.5/3.3V
刷新 4K
速度(MHz) 75 = up to 133Mhz @ CL2
腳位/封裝 BGA(54)
狀態 EOL
產品系列 42 = 商業/工業級SDRAM
總線寬度 16 = x16
字數 200 = 2M
代/版本 C
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)
外包裝 卷轴包

IS42SM16200C-75BLI-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type.
  • - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control
  • - Full Strength or 1/2, 1/4, 1/8 of Full Strength
  • Deep Power Down Mode.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal dual banks operation.
  • Burst Read Single Write operation.
  • Special Function Support.
  • - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh)


These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.