IS42RM83200D-7TLI

容量 256M
規格 32Mx8
電壓 2.5/3.3V
類型 MSDR
刷新 8K
狀態 Contact ISSI
評注
腳位數 TSOP(54)
速度Mhz 143
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
Generation D = D
字數 3200 = 32M
速度 7 = 143MHz
工作電壓範圍 RM = 2.5V
總線寬度 8 = x8
腳位/封裝 T = TSOP
產品系列 42 = SDR Commercial/Industrial grade

IS42RM83200D-7TLI 特徵

  • -71 7 9.6 KEY TIMING PARAMETERS Parameter -752 CLK Cycle Time CAS Latency = 3 CAS Latency = 2 CLK Frequency CAS Latency = 3 CAS Latency = 2 Access Time from CLK CAS Latency = 3 CAS Latency = 2 143 104 133 104 7.5 9.6 5.4 8 5.4 8 1. Available for x8/x16 only 2. Available for x32 only -10 Unit 10 12 100 83 8 9 ns ns Mhz Mhz ns ns
  • OPTIONS

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42RM83200D-7TLI-TR IS42SM83200D-7TLI-TR
IS42SM83200D-7TLI