容量 4G
電壓 1.8V
Ecc要求 4-bit
總線寬度 X8
連續讀取速度(NS) 45
温規 -40°C to 105°C
腳位/封裝 48-TSOP
狀態 Prod
外包裝 卷轴包
相關IC编號
IS34MW04G084-TLI

IS34MW04G084-TLI-TR 特徵

  • Efficient Read and Program modes
  • - Command/Address/Data Multiplexed I/O Interface - Command Register Operation - Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download - NOP: 4 cycles - Cache Program Operation for High Performance Program - Cache Read Operation - Copy-Back Operation - EDO mode - OTP operation - Two-Plane Operation - Bad-Block-Protect
  • Advanced Security Protection
  • - Hardware Data Protection: - Program/Erase Lockout during Power Transitions
  • Industry Standard Pin-out & Packages
  • - T =48-pin TSOP 1 Note: 1. Call Factory
  • Flexible & Efficient Memory Architecture
  • - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - - - - Memory Cell Array: (256M + 8M) x 16bit - Data Register: (1K + 32) x 16bit - Page Size: (1K + 32) Byte - Block Erase: (64K + 2K) Byte
  • Highest performance
  • - Read Performance - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms
    • typical
  • Low Power with Wide Temp. Ranges
  • - Single 1.8V (1.7V to 1.95V) Voltage Supply - 15 mA Active Read Current - 10 µA Standby Current - T emp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C (1) - Automotive, A1: -40°C to +85°C - Automotive, A2: -40°C to +105°C (1) -

概觀

The IS34/35MW4G084/164 are 512Mx8/256Mx16 bit with spare 16Mx8/8Mx16 bit capacity. The devices are offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 4,096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 300us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block (or 64K- Word for x16 device block). Data in the page mode can be read out at 45ns cycle time per Word. The I/O pins serve as the ports for address and command inputs as well as data input/output. The copy back function allows the optimization of defective blocks management: when a page program operation fails, the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. The cache program feature allows the data insertion in the cache register while the data register is copied into the Flash array. This pipelined program operation improves the program throughput when long files are written inside the memory. A cache read feature is also implemented. This feature allows to dramatically improving the read throughput when consecutive pages have to be streamed out. This device includes extra feature: Automatic Read at Power Up.