IS29GL256-70DLA3B

容量	256M
電壓	2.7-3.6V
類型	x8/x16
備註	High Protection (T) or Low Protection (B)
狀態	Prod
溫度範圍	-40 to 125°C
訪問時間	70ns
腳位類型	TSOP, BGA
產品系列	29GL = 29GL
腳位/封裝	D = 56-Ball BGA 7x9mm
Temperature Grade	blank = Refer to datasheet
無鉛封裝	L = true
容量	256 = 256M
速度	70 = 70NS
引導扇區	blank = Industry Standard Parallel CFI

數據表

索取報價

IS29GL256-70DLA3B 特徵

Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
WP#/ACC input write operations
Fast Access Time at -40°C to +125°C:
- 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input.
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming time for multiple-word updates
Secured Silicon Region (SSR)
- 512-word/1024-byte sector for permanent, secure identification - 256-word Factory Locked SSR and 256-word Customer Locked SSR
Uniform 64Kword/128KByte Sector Architecture
Suspend and Resume commands for Program and Erase operations
Write operation status bits indicate program and erase operation completion
Support for CFI (Common Flash Interface)
Volatile and non-volatile methods of Advanced Sector Protection GENERAL DESCRIPTION
- Accelerates programming time (when VHH is applied) for greater throughput during system production - Protects first or last sector regardless of sector protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase cycle completion
Minimum 100K program/erase endurance cycles.
Package Options
- 56-pin TSOP - 64-ball 13mm x 11mm BGA - 64-ball 9mm x 9mm BGA - 56-ball 9mm x 7mm BGA (Call Factory)

概觀

The IS29GL256/128 offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

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