| 規格 | 1Mx16 |
|---|---|
| 腳位/封裝 | TSOP |
| 電壓 | 5V |
| 刷新 | 1K |
| 速度 | 50 = 50Ns |
| 字數 | 105M |
| 焊接 | 100% matte Sn |
| 狀態 | Prod |
| 類型 | FP |
| 總線寬度 | 16 = x16 |
| 温規 | Industrial Grade (-40C to +85°C) |
| 代/版本 | C |
| 產品系列 | 41 = Asynchronous |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 105 = 1M |
| Generation | C = C |
| 工作電壓範圍 | LV = 3.3V |
| 腳位/封裝 | T = TSOP |
The ISSI IS41C16105C and IS41LV16105C are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O. These features make the IS41C16105C and IS41LV16105C ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications that run without a clock to synchronize with the DRAM. The IS41C/LV16105C is packaged in a 42-pin 400-mil SOJ and 400-mil 50/44-pin TSOP (Type II).