| 容量 | 16M |
|---|---|
| 規格 | 1Mx16 |
| 電壓 | 3.3V |
| 類型 | EDO |
| 刷新 | 1K |
| 速度 | 50 = 50Ns |
| 狀態 | Prod |
| 腳位數 | SOJ(42), TSOP2(44/50) |
| 評論上一篇 | IS41LV16100C |
| 產品系列 | 41 = Asynchronous |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 100 = 1M |
| Generation | D = D |
| 工作電壓範圍 | LV = 3.3V |
| 總線寬度 | 16 = x16 |
| 腳位/封裝 | T = TSOP |
The ISSI IS41LV16100D is a 1,048,576 x 16-bit high- performance CMOS Dynamic Random Access Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS41LV16100D-50TLI-TR | 4,400 | IS41LV16100D-50KLI | 7 | ||
| IS41LV16100D | IS41LV16100D-50KLI-TR | 5,000 | |||
| IS41LV16100D-50KI | IS41LV16100D-50TI | ||||
| IS41LV16100D-50KI-TR | IS41LV16100D-50TI-TR |