1. 矽成
  2. 動態記憶體
  3. DDR4 SDRAM
  4. 1.2V
  5. 4G 512Mx8
  6. BGA(78)
  7. IS43QR85120A-083RBL

  IS43QR85120A-083RBL

數據表
索取報價
容量 4G
規格 512Mx8
腳位/封裝 BGA(78)
電壓 1.2V
刷新 8K
速度 083 = 1200Mhz
字數 512M
型號別 IBIS
焊接 SnAgCu
狀態 Contact ISSI
類型 DDR4
總線寬度 8 = x8
温規 Commercial Grade (0C to +70°C)
CL（CAS延遲） R = 16
代/版本 A
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
字數 5120 = 512M
Generation A = A
工作電壓範圍 QR = 1.1V - 1.8V DDR4
腳位/封裝 B = BGA
數據表
索取報價

IS43QR85120A-083RBL 特徵

  • Standard Voltage: VDD = VDDQ = 1.2V, VPP=2.5V
  • Signal Integrity
  • High speed data transfer rates with system frequency
  • - Internal VREFDQ Training up to 2666 Mbps
  • Data Integrity
  • - Auto Self Refresh (ASR) by DRAM built-in TS - Read Preamble Training - Gear Down Mode - Per DRAM Adressability - Auto Refresh and Self Refresh Modes - Configurable DS for system compatibility
  • DRAM access bandwidth
  • - Configurable On-Die Termination - Separated IO gating structures by Bank Groups - Data bus Inversion (DBI) - Self Refresh Abort - Fine Granularity Refresh
  • Signal Synchronization
  • - Write Leveling via MR settings - Read Leveling via MPR
  • Reliability & Error Handling
  • - Command/Address Parity - Data bus Write CRC - MPR readout - Boundary Scan (x16)
  • Speed Grade (CL-TRCD-TRP)
  • - 2133Mbps / 15-15-15 (-093P) - 2400Mbps / 16-16-16 (-083R) - 2666Mbps / 18-18-18 (-075U) - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm +/- 1%)
  • Power Saving and efficiency
  • - POD with VDDQ termination - Command/Address Latency (CAL) - Maximum Power Saving - Low power Auto Self Refresh (LPASR)
  • Operating Temperature
  • - Commercial ( Tc = 0 oC to + 95 oC) - Industrial ( Tc = -40 oC to + 95oC) - Automotive A1 ( Tc = -40 oC to + 95 oC) - Automotive A2 ( Tc = -40 oC to + 105 oC) PPROGRAMMABLE FUNCTIONS ADDRESS TABLE
  • Output Driver Impedance (34/48)
  • CAS Write Latency (9/0/11/12/14/16/18)
  • Additive Latency (0/CL-1/CL-2)
  • CS# to Command Address (3/4/5/6/8)
  • Burst Type (Sequential/Interleaved)
  • Write Recovery Time (10/12/14/16/18/20/24)
  • Read Preamble (1T/2T)
  • Write Preamble (1T/2T)
  • Burst Length (BL8/BC4/BC4 or 8 on the fly) Options
  • Configuration: 512Mx8, 256Mx16