IS46TR81280AL - 日耀电子 | ISSI/蕊成授权代理

容量	1G
規格	128Mx8
腳位/封裝	BGA(78)
電壓	1.35V
刷新	8K
速度	1600, 1333
型號別	IBIS
狀態	Contact ISSI
類型	DDR3
產品系列	46 = DDR/DDR2/DDR3/DDR4 Automotive grade
字數	1280 = 128M
工作電壓範圍	TR = 1.5V DDR3
總線寬度	8 = x8

IS46TR81280AL 特徵

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
High speed data transfer rates with system frequency up to 933 MHz
8 internal banks for concurrent operation
8n-bit pre-fetch architecture
Programmable CAS Latency MARCH 2016
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Programmable Additive Latency: 0, CL-1,CL-2
Dynamic ODT (On-Die Termination)
Programmable CAS WRITE latency (CWL) based
Driver strength : RZQ/7, RZQ/6 (RZQ = 240  ) on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) OPTIONS
Configuration: 128Mx8 64Mx16
Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN
Write Leveling
Up to 200 MHz on DLL off mode