容量 8G
規格 512Mx16
類型 DDR3
電壓 1.35V
刷新 8K
速度 15 = up to 667 Mhz (DDR3 - 1333)
腳位/封裝 BGA(96)
狀態 Prod
型號別 IBIS
產品系列 46 = 車規DDR/DDR2/DDR3/DDR4
總線寬度 16 = x16
字數 512 = 512M
代/版本 A
CL(CAS延遲) H = 9
焊接 L = SnAgCu
温規 A1 = 車規 (-40C to +85°C)
外包裝 卷轴包

IS46TR16512AL-15HBLA1-TR 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
  • -Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 933 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 512Mx16(dual die)
  • Package: 96-ball BGA (10mm x 14mm) ADDRESS TABLE SPEED BIN MARCH 2017
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
  • Write Leveling
  • Up to 200 MHz in DLL off mode