IS46TR16256BL-107MBLA2-TR

容量 4G
規格 256Mx16
電壓 1.5V
類型 DDR3
刷新 8K
速度 107 = 933MHz
狀態 S=NOW
腳位數 BGA(96)
評論上一篇
產品系列 46 = DDR/DDR2/DDR3/DDR4 Automotive grade
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = SnAgCu
字數 256 = 256M
CL(CAS延遲) M = 13
Low Voltage L = Supports 1.35V & 1.5V
Generation B = B
工作電壓範圍 TR = 1.5V DDR3
總線寬度 16 = x16
腳位/封裝 B = BGA
外包裝 Tape on Reel

IS46TR16256BL-107MBLA2-TR 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 1066 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 512Mx8 256Mx16
  • Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN ADVANCED INFORMATION MARCH 2018
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
  • Write Leveling
 

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IS46TR16256BL-107MBLA2 IS46TR16256B-15HBLA2-TR
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IS46TR16256B-107MBLA1-TR IS46TR16256BL-107MBLA1-TR
IS46TR16256B-107MBLA2 IS46TR16256BL-125KBLA1 1,140
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IS46TR16256B-125KBLA1-TR IS46TR16256BL-125KBLA2-TR 1,500
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IS46TR16256B-15HBLA1 IS46TR16256BL-15HBLA2
IS46TR16256B-15HBLA1-TR IS46TR16256BL-15HBLA2-TR
IS46TR16256B-15HBLA2