IS43TR85120AL-125KBL

容量 4G
規格 512Mx8
電壓 1.5V
類型 DDR3
刷新 8K
速度 125 = 800MHz
狀態 Prod
腳位數 BGA(78)
評論上一篇
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
Generation A = A
字數 5120 = 512M
CL(CAS延遲) K = 11
Low Voltage L = Supports 1.35V & 1.5V
工作電壓範圍 TR = 1.5V DDR3
總線寬度 8 = x8
腳位/封裝 B = BGA
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade

IS43TR85120AL-125KBL 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 1066 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency FEBRUARY 2018
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Dynamic ODT (On-Die Termination)
  • Programmable CAS WRITE latency (CWL) based
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or
  • Write Leveling
  • Up to 200 MHz in DLL off mode
  • Operating temperature: Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 512Mx8 256Mx16
 

相關IC编號

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IS43TR85120AL-125KBL-TR 6,500 IS43TR85120A-125KBL-TR 1,500
IS43TR85120A-093NBL 50,000 IS43TR85120A-125KBLI 10,000
IS43TR85120A-093NBL-TR IS43TR85120A-125KBLI-TR 6,500
IS43TR85120A-093NBLI 50,000 IS43TR85120AL-107MBL 50,000
IS43TR85120A-093NBLI-TR IS43TR85120AL-107MBL-TR
IS43TR85120A-107MBL 50,000 IS43TR85120AL-107MBLI 50,000
IS43TR85120A-107MBL-TR IS43TR85120AL-107MBLI-TR
IS43TR85120A-107MBLI 50,000 IS43TR85120AL-125KBLI 10,000
IS43TR85120A-107MBLI-TR IS43TR85120AL-125KBLI-TR 1,500
IS43TR85120A-125KBL 2,000