規格 64Mx16
類型 DDR3
電壓 1.35V
刷新 8K
速度 107 = up to 933 Mhz (DDR3 - 1866)
腳位/封裝 BGA(96)
狀態 Prod
型號別 IBIS
產品系列 43 = 商業/工業級DDR/DDR2/DDR3/DDR4
總線寬度 16 = x16
字數 640 = 64M
代/版本 B
CL(CAS延遲) M = 13
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)
外包裝 卷轴包

IS43TR16640BL-107MBLI-TR 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 1066 MHz
  • 8 internal banks for concurrent operation
  • 8n-bit pre-fetch architecture
  • Programmable CAS Latency MAY 2017
  • Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Dynamic ODT (On-Die Termination)
  • Programmable CAS WRITE latency (CWL) based
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240  ) on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT) OPTIONS
  • Configuration: 128Mx8 64Mx16
  • Package: 96-ball BGA (9mm x 13mm) for x16 78-ball BGA (8mm x 10.5mm) for x8 SPEED BIN
  • Write Leveling
  • Up to 200 MHz in DLL off mode